auf Bestellung 2920 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.93 EUR |
| 10+ | 0.77 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.4 EUR |
| 3000+ | 0.36 EUR |
| 6000+ | 0.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details QH8MA2TCR ROHM Semiconductor
Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A, Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Weitere Produktangebote QH8MA2TCR nach Preis ab 0.4 EUR bis 0.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
QH8MA2TCR | Hersteller : Rohm Semiconductor |
 Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 1648 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| QH8MA2TCR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4.5/3A; Idm: 12A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.5/3A Pulsed drain current: 12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 56/115mΩ Mounting: SMD Gate charge: 7.8/8.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
QH8MA2TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 4.5A/3A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3A Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
Produkt ist nicht verfügbar |
|||||||||||||
| QH8MA2TCR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4.5/3A; Idm: 12A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.5/3A Pulsed drain current: 12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 56/115mΩ Mounting: SMD Gate charge: 7.8/8.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |