![QH8JA1TCR QH8JA1TCR](https://www.mouser.com/images/rohmsemiconductor/lrg/TSMT-8_SPL.jpg)
auf Bestellung 2743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.41 EUR |
10+ | 1.15 EUR |
100+ | 0.9 EUR |
500+ | 0.76 EUR |
1000+ | 0.62 EUR |
3000+ | 0.58 EUR |
6000+ | 0.55 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details QH8JA1TCR ROHM Semiconductor
Description: MOSFET 2P-CH 20V 5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V, Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: TSMT8, Part Status: Active.
Weitere Produktangebote QH8JA1TCR nach Preis ab 0.63 EUR bis 1.44 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
QH8JA1TCR | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
auf Bestellung 2192 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
QH8JA1TCR | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -5A; Idm: -18A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -5A Pulsed drain current: -18A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 77mΩ Mounting: SMD Gate charge: 10.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
QH8JA1TCR | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
Produkt ist nicht verfügbar |
|||||||||||||
QH8JA1TCR | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -5A; Idm: -18A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -5A Pulsed drain current: -18A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 77mΩ Mounting: SMD Gate charge: 10.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |