auf Bestellung 1923 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.81 EUR |
| 10+ | 6.86 EUR |
| 50+ | 5.83 EUR |
| 100+ | 5.28 EUR |
| 250+ | 5 EUR |
| 500+ | 4.7 EUR |
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Technische Details PSMP075N15NS1_T0_00601 Panjit
Description: 150V N-CHANNEL ENHANCEMENT MODE, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 125A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V, Power Dissipation (Max): 258.6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6511 pF @ 75 V.
Weitere Produktangebote PSMP075N15NS1_T0_00601 nach Preis ab 4.05 EUR bis 7.83 EUR
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PSMP075N15NS1_T0_00601 | Hersteller : Panjit International Inc. |
 Description: 150V N-CHANNEL ENHANCEMENT MODEPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 125A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V Power Dissipation (Max): 258.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6511 pF @ 75 V |
auf Bestellung 1877 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMP075N15NS1_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 125A; Idm: 350A; 258.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 125A Pulsed drain current: 350A Power dissipation: 258.6W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMP075N15NS1_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 125A; Idm: 350A; 258.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 125A Pulsed drain current: 350A Power dissipation: 258.6W Case: TO220ABL Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |