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Technische Details PSMN5R0-40MSHX Nexperia
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A, Power dissipation: 83W, Case: LFPAK33; SOT1210, Mounting: SMD, Kind of package: reel; tape, Technology: NextPowerS3, Drain-source voltage: 40V, Drain current: 62A, On-state resistance: 10.9mΩ, Gate charge: 29nC, Polarisation: unipolar, Kind of channel: enhanced, Pulsed drain current: 349A, Gate-source voltage: ±20V, Type of transistor: N-MOSFET.
Weitere Produktangebote PSMN5R0-40MSHX
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PSMN5R0-40MSHX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A Power dissipation: 83W Case: LFPAK33; SOT1210 Mounting: SMD Kind of package: reel; tape Technology: NextPowerS3 Drain-source voltage: 40V Drain current: 62A On-state resistance: 10.9mΩ Gate charge: 29nC Polarisation: unipolar Kind of channel: enhanced Pulsed drain current: 349A Gate-source voltage: ±20V Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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PSMN5R0-40MSHX | Hersteller : Nexperia USA Inc. | Description: MOSFET N-CH 40V 85A LFPAK33 |
Produkt ist nicht verfügbar |
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PSMN5R0-40MSHX | Hersteller : Nexperia USA Inc. | Description: MOSFET N-CH 40V 85A LFPAK33 |
Produkt ist nicht verfügbar |
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PSMN5R0-40MSHX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A Power dissipation: 83W Case: LFPAK33; SOT1210 Mounting: SMD Kind of package: reel; tape Technology: NextPowerS3 Drain-source voltage: 40V Drain current: 62A On-state resistance: 10.9mΩ Gate charge: 29nC Polarisation: unipolar Kind of channel: enhanced Pulsed drain current: 349A Gate-source voltage: ±20V Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |