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PSMN4R5-80YSFX

PSMN4R5-80YSFX Nexperia

PSMN4R5_80YSF-3162115.pdf Hersteller: Nexperia
MOSFET MOS DISCRETES
auf Bestellung 2430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.31 EUR
10+ 2.75 EUR
100+ 2.2 EUR
250+ 2.02 EUR
500+ 1.83 EUR
1000+ 1.57 EUR
1500+ 1.51 EUR
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Technische Details PSMN4R5-80YSFX Nexperia

Description: NEXTPOWER 80/100V MOSFETS, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V, Power Dissipation (Max): 238W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6009 pF @ 40 V.

Weitere Produktangebote PSMN4R5-80YSFX nach Preis ab 2.32 EUR bis 4.15 EUR

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Preis ohne MwSt
PSMN4R5-80YSFX PSMN4R5-80YSFX Hersteller : Nexperia USA Inc. PSMN4R5-80YSF.pdf Description: NEXTPOWER 80/100V MOSFETS
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6009 pF @ 40 V
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.15 EUR
10+ 3.45 EUR
100+ 2.74 EUR
500+ 2.32 EUR
Mindestbestellmenge: 5
PSMN4R5-80YSFX PSMN4R5-80YSFX Hersteller : Nexperia USA Inc. PSMN4R5-80YSF.pdf Description: NEXTPOWER 80/100V MOSFETS
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6009 pF @ 40 V
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