auf Bestellung 6551 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 2.9 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.64 EUR |
| 1000+ | 1.45 EUR |
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Technische Details PSMN4R5-40PS,127 Nexperia
Description: MOSFET N-CH 40V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V, Power Dissipation (Max): 148W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 12 V.
Weitere Produktangebote PSMN4R5-40PS,127 nach Preis ab 1.41 EUR bis 3.27 EUR
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PSMN4R5-40PS,127 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 40V 100A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 12 V |
auf Bestellung 8986 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN4R5-40PS,127 | Hersteller : NEXPERIA |
PSMN4R5-40PS.127 THT N channel transistors |
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