PSMN4R4-80BS,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 2.97 EUR |
| 1600+ | 2.54 EUR |
| 2400+ | 2.39 EUR |
| 5600+ | 2.3 EUR |
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Technische Details PSMN4R4-80BS,118 Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V.
Weitere Produktangebote PSMN4R4-80BS,118 nach Preis ab 2.48 EUR bis 4.93 EUR
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PSMN4R4-80BS,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W Pulsed drain current: 680A Power dissipation: 306W Gate charge: 125nC Polarisation: unipolar Drain current: 100A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK; SOT404 On-state resistance: 9.12mΩ Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 579 Stücke: Lieferzeit 7-14 Tag (e) |
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PSMN4R4-80BS,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W Pulsed drain current: 680A Power dissipation: 306W Gate charge: 125nC Polarisation: unipolar Drain current: 100A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK; SOT404 On-state resistance: 9.12mΩ Mounting: SMD |
auf Bestellung 579 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R4-80BS,118 | Hersteller : Nexperia |
MOSFETs PSMN4R4-80BS/SOT404/D2PAK |
auf Bestellung 4429 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R4-80BS,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V |
auf Bestellung 7925 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R4-80BS,118 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |