PSMN3R4-30PL,127 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 30V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 10A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3907 pF @ 12 V
auf Bestellung 7994 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.36 EUR |
| 10+ | 2.79 EUR |
| 100+ | 2.22 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.59 EUR |
| 2000+ | 1.51 EUR |
| 5000+ | 1.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN3R4-30PL,127 Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 10A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3907 pF @ 12 V.
Weitere Produktangebote PSMN3R4-30PL,127 nach Preis ab 1.5 EUR bis 3.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PSMN3R4-30PL,127 | Hersteller : Nexperia |
MOSFET PSMN3R4-30PL/SOT78/SIL3P |
auf Bestellung 5086 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
PSMN3R4-30PL,127 Produktcode: 103007 |
Transistoren > MOSFET N-CH ZCODE: 8541290010 |
Produkt ist nicht verfügbar
|
||||||||||||||||||
 |
PSMN3R4-30PL,127 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 100A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
PSMN3R4-30PL,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 100A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
PSMN3R4-30PL,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 609A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 609A Power dissipation: 114W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
PSMN3R4-30PL,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 609A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 609A Power dissipation: 114W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||||||
| PSMN3R4-30PL | Hersteller : Nexperia | MOSFET |
Produkt ist nicht verfügbar |