![PSMN3R4-30BL,118 PSMN3R4-30BL,118](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4845/MFG_2156_MJD32CTF-ON.jpg)
PSMN3R4-30BL,118 NXP USA Inc.
![PHGLS24329-1.pdf?t.download=true&u=5oefqw](/images/adobe-acrobat.png)
Description: NOW NEXPERIA PSMN3R4-30BL - 100A
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3907 pF @ 15 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
494+ | 0.99 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN3R4-30BL,118 NXP USA Inc.
Description: NOW NEXPERIA PSMN3R4-30BL - 100A, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3907 pF @ 15 V.
Weitere Produktangebote PSMN3R4-30BL,118 nach Preis ab 2.6 EUR bis 2.6 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
---|---|---|---|---|---|---|---|---|---|
![]() |
PSMN3R4-30BL,118 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3907 pF @ 15 V |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
PSMN3R4-30BL,118 | Hersteller : NXP |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
||||||
![]() |
PSMN3R4-30BL,118 | Hersteller : NEXPERIA |
![]() |
Produkt ist nicht verfügbar |
|||||
PSMN3R4-30BL,118 | Hersteller : NEXPERIA |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 465A; 103W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 465A Power dissipation: 103W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 41.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||
![]() |
PSMN3R4-30BL,118 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3907 pF @ 15 V |
Produkt ist nicht verfügbar |
|||||
![]() |
PSMN3R4-30BL,118 | Hersteller : Nexperia |
![]() |
Produkt ist nicht verfügbar |
|||||
PSMN3R4-30BL,118 | Hersteller : NEXPERIA |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 465A; 103W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 465A Power dissipation: 103W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 41.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |