auf Bestellung 2000 Stücke:
Lieferzeit 101-105 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.25 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1 EUR |
| 3000+ | 0.95 EUR |
| 6000+ | 0.9 EUR |
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Technische Details PSMN2R8-40YSBX Nexperia
Description: PSMN2R8-40YSB/SOT669/LFPAK, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4563 pF @ 20 V.
Weitere Produktangebote PSMN2R8-40YSBX
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN2R8-40YSBX | Hersteller : Nexperia |
 Trans MOSFET N-CH 40V 160A 5-Pin(4+Tab) LFPAK |
Produkt ist nicht verfügbar |
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PSMN2R8-40YSBX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 160A 5-Pin(4+Tab) LFPAK |
Produkt ist nicht verfügbar |
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PSMN2R8-40YSBX | Hersteller : Nexperia USA Inc. |
Description: PSMN2R8-40YSB/SOT669/LFPAK Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4563 pF @ 20 V |
Produkt ist nicht verfügbar |
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PSMN2R8-40YSBX | Hersteller : Nexperia USA Inc. |
Description: PSMN2R8-40YSB/SOT669/LFPAK Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4563 pF @ 20 V |
Produkt ist nicht verfügbar |