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PSMN2R7-30BL,118 Nexperia USA Inc.
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Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3954 pF @ 15 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.67 EUR |
1600+ | 1.42 EUR |
2400+ | 1.35 EUR |
5600+ | 1.3 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN2R7-30BL,118 Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3954 pF @ 15 V.
Weitere Produktangebote PSMN2R7-30BL,118 nach Preis ab 1.97 EUR bis 2.97 EUR
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PSMN2R7-30BL,118 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3954 pF @ 15 V |
auf Bestellung 6407 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R7-30BL,118 | Hersteller : NEXPERIA |
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Produkt ist nicht verfügbar |
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PSMN2R7-30BL,118 | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 730A Power dissipation: 170W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN2R7-30BL,118 | Hersteller : Nexperia |
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Produkt ist nicht verfügbar |
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PSMN2R7-30BL,118 | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 730A Power dissipation: 170W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |