PSMN2R6-80YSFX Nexperia
auf Bestellung 1500 Stücke:
Lieferzeit 101-105 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.27 EUR |
| 10+ | 2.71 EUR |
| 100+ | 2.16 EUR |
| 250+ | 1.99 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.56 EUR |
| 1500+ | 1.48 EUR |
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Technische Details PSMN2R6-80YSFX Nexperia
Description: PSMN2R6-80YSF/SOT1023/4 LEADS, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 231A (Ta), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V, Power Dissipation (Max): 294W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8191 pF @ 40 V.
Weitere Produktangebote PSMN2R6-80YSFX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PSMN2R6-80YSFX | Hersteller : NEXPERIA |
 Trans MOSFET N-CH 80V 231A |
Produkt ist nicht verfügbar |
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| PSMN2R6-80YSFX | Hersteller : Nexperia USA Inc. |
Description: PSMN2R6-80YSF/SOT1023/4 LEADS Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 231A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 294W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8191 pF @ 40 V |
Produkt ist nicht verfügbar |
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| PSMN2R6-80YSFX | Hersteller : Nexperia USA Inc. |
Description: PSMN2R6-80YSF/SOT1023/4 LEADS Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 231A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 294W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8191 pF @ 40 V |
Produkt ist nicht verfügbar |