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PSMN1R6-40YLC:115

PSMN1R6-40YLC:115 Nexperia


PSMN1R6-40YLC-339606.pdf Hersteller: Nexperia
MOSFET N-channel 40 V 1.55 mo FET
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Technische Details PSMN1R6-40YLC:115 Nexperia

Description: MOSFET N-CH 40V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.55mOhm @ 25A, 10V, Power Dissipation (Max): 288W (Tc), Vgs(th) (Max) @ Id: 1.95V @ 1mA, Supplier Device Package: LFPAK56; Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7790 pF @ 20 V.

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PSMN1R6-40YLC:115 PSMN1R6-40YLC:115 Hersteller : Nexperia USA Inc. PSMN1R6-40YLC.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 25A, 10V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7790 pF @ 20 V
Produkt ist nicht verfügbar
PSMN1R6-40YLC:115 PSMN1R6-40YLC:115 Hersteller : Nexperia USA Inc. PSMN1R6-40YLC.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 25A, 10V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7790 pF @ 20 V
Produkt ist nicht verfügbar