PSMN071-100NSEX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: PSMN071-100NSE/SOT1220-2/DFN20
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 82.3mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 559 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.21 EUR |
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Technische Details PSMN071-100NSEX Nexperia USA Inc.
Description: PSMN071-100NSE/SOT1220-2/DFN20, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc), Rds On (Max) @ Id, Vgs: 82.3mOhm @ 5A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: DFN2020M-6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 559 pF @ 50 V.
Weitere Produktangebote PSMN071-100NSEX nach Preis ab 0.18 EUR bis 0.77 EUR
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PSMN071-100NSEX | Hersteller : Nexperia |
MOSFET PSMN071-100NSE/SOT1220-2/DFN20 |
auf Bestellung 2490 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN071-100NSEX | Hersteller : Nexperia USA Inc. |
Description: PSMN071-100NSE/SOT1220-2/DFN20 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Rds On (Max) @ Id, Vgs: 82.3mOhm @ 5A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: DFN2020M-6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 559 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN071-100NSEX | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 9.8A T/R |
Produkt ist nicht verfügbar |
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PSMN071-100NSEX | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 9.8A T/R |
Produkt ist nicht verfügbar |
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| PSMN071-100NSEX | Hersteller : NEXPERIA |
N-Channel MOSFET 100 V, 81 mOhm Standard Level |
Produkt ist nicht verfügbar |