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PSMN035-150B,118 NXP Semiconductors
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Description: NEXPERIA PSMN035-150B - 50A, 150
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 25 V
auf Bestellung 3941 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
375+ | 1.41 EUR |
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Technische Details PSMN035-150B,118 NXP Semiconductors
Description: NEXPERIA PSMN035-150B - 50A, 150, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 25 V.
Weitere Produktangebote PSMN035-150B,118
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PSMN035-150B,118 Produktcode: 127835 |
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PSMN035-150B,118 | Hersteller : NEXPERIA |
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Produkt ist nicht verfügbar |
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PSMN035-150B,118 | Hersteller : Nexperia |
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Produkt ist nicht verfügbar |