PSMB055N08NS1_T0_00601 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Pulsed drain current: 360A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 65.8nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMB055N08NS1_T0_00601 PanJit Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 108A, Pulsed drain current: 360A, Power dissipation: 113.6W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 7mΩ, Mounting: SMD, Gate charge: 65.8nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PSMB055N08NS1_T0_00601
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
PSMB055N08NS1_T0_00601 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Pulsed drain current: 360A Power dissipation: 113.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 65.8nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |