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PSMB032N08NS1_R2_00601

PSMB032N08NS1_R2_00601 Panjit International Inc.

PSMB032N08NS1.pdf Hersteller: Panjit International Inc.
Description: 80V/ 3.4MOHM / MV MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 40 V
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.68 EUR
10+ 3.06 EUR
100+ 2.43 EUR
Mindestbestellmenge: 5
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Technische Details PSMB032N08NS1_R2_00601 Panjit International Inc.

Description: 80V/ 3.4MOHM / MV MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 161A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 250µA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 7 V, Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 40 V.

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PSMB032N08NS1_R2_00601 PSMB032N08NS1_R2_00601 Hersteller : Panjit PSMB032N08NS1.pdf MOSFET 80V 3.4mohm MV MOSFET
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.71 EUR
10+ 3.1 EUR
100+ 2.46 EUR
250+ 2.27 EUR
500+ 2.06 EUR
800+ 1.75 EUR
2400+ 1.67 EUR
PSMB032N08NS1_R2_00601 PSMB032N08NS1_R2_00601 Hersteller : Panjit International Inc. PSMB032N08NS1.pdf Description: 80V/ 3.4MOHM / MV MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 40 V
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