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PMXB75UPE147 NXP USA Inc.
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Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010D-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V
auf Bestellung 4088434 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4729+ | 0.097 EUR |
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Technische Details PMXB75UPE147 NXP USA Inc.
Description: P-CHANNEL MOSFET, Packaging: Bulk, Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V, Power Dissipation (Max): 317mW (Ta), 8.33W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN1010D-3, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V.
Weitere Produktangebote PMXB75UPE147
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
PMXB75UPE147 | Hersteller : NXP |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 4088434 Stücke: Lieferzeit 14-21 Tag (e) |