auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 20000+ | 0.075 EUR |
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Technische Details PMV65XPVL Nexperia
Description: MOSFET P-CH 20V 2.8A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 74mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 480mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 20 V.
Weitere Produktangebote PMV65XPVL nach Preis ab 0.1 EUR bis 0.69 EUR
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PMV65XPVL | Hersteller : Nexperia USA Inc. |
 Description: MOSFET P-CH 20V 2.8A TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 74mOhm @ 2.8A, 4.5V Power Dissipation (Max): 480mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 20 V |
auf Bestellung 3776 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV65XPVL | Hersteller : Nexperia |
MOSFETs PMV65XP/SOT23/TO-236AB |
auf Bestellung 25172 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV65XPVL | Hersteller : NEXPERIA |
Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMV65XPVL | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -16A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
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PMV65XPVL | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 2.8A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 74mOhm @ 2.8A, 4.5V Power Dissipation (Max): 480mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 20 V |
Produkt ist nicht verfügbar |
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PMV65XPVL | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -16A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |