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PMV48XPA2R Nexperia USA Inc.
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Description: MOSFET P-CH 20V 4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 4A, 8V
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
9000+ | 0.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMV48XPA2R Nexperia USA Inc.
Description: MOSFET P-CH 20V 4A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 49mOhm @ 4A, 8V, Power Dissipation (Max): 610mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote PMV48XPA2R nach Preis ab 0.11 EUR bis 0.59 EUR
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PMV48XPA2R | Hersteller : Nexperia |
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auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMV48XPA2R | Hersteller : Nexperia |
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auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMV48XPA2R | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 4A, 8V Power Dissipation (Max): 610mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 16450 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV48XPA2R | Hersteller : Nexperia |
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auf Bestellung 102951 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV48XPA2R | Hersteller : NEXPERIA |
![]() tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 950mV euEccn: NLR Verlustleistung: 610mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 8V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.037ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2083 Stücke: Lieferzeit 14-21 Tag (e) |
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PMV48XPA2R | Hersteller : NEXPERIA |
![]() tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 950mV euEccn: NLR Verlustleistung: 610mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 8V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.037ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2083 Stücke: Lieferzeit 14-21 Tag (e) |
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PMV48XPA2R | Hersteller : NEXPERIA |
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auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMV48XPA2R | Hersteller : Nexperia |
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Produkt ist nicht verfügbar |
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PMV48XPA2R | Hersteller : NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.6A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.6A Pulsed drain current: -16A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 78mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMV48XPA2R | Hersteller : NEXPERIA |
![]() Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -2.6A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.6A Pulsed drain current: -16A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 78mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |