PMV160UP,215 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET P-CH 20V 1.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 335mW (Ta), 2.17W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.14 EUR |
| 9000+ | 0.12 EUR |
| 75000+ | 0.1 EUR |
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Technische Details PMV160UP,215 Nexperia USA Inc.
Description: MOSFET P-CH 20V 1.2A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 210mOhm @ 1.2A, 4.5V, Power Dissipation (Max): 335mW (Ta), 2.17W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V.
Weitere Produktangebote PMV160UP,215 nach Preis ab 0.087 EUR bis 5.89 EUR
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PMV160UP,215 | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.8A; 480mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.8A Power dissipation: 0.48W Case: SOT23; TO236AB Gate-source voltage: ±8V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4043 Stücke: Lieferzeit 7-14 Tag (e) |
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PMV160UP,215 | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.8A; 480mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.8A Power dissipation: 0.48W Case: SOT23; TO236AB Gate-source voltage: ±8V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 4043 Stücke: Lieferzeit 14-21 Tag (e) |
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PMV160UP,215 | Hersteller : Nexperia |
MOSFETs PMV160UP/SOT23/TO-236AB |
auf Bestellung 47425 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV160UP,215 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 1.2A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 210mOhm @ 1.2A, 4.5V Power Dissipation (Max): 335mW (Ta), 2.17W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V |
auf Bestellung 97356 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV160UP,215 | Hersteller : NEXPERIA |
Trans MOSFET P-CH 20V 1.2A 3-Pin SOT-23 T/R |
auf Bestellung 324000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMV160UP,215 | Hersteller : NXP |
Trans MOSFET P-CH 20V 1.2A 3-Pin TO-236AB PMV160UP,215 TPMV160u Anzahl je Verpackung: 95 Stücke |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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| PMV160UP,215 | Hersteller : NXP |
Trans MOSFET P-CH 20V 1.2A 3-Pin TO-236AB PMV160UP,215 TPMV160u Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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