PMV13XNEAR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: PMV13XNEA - 20 V, N-CHANNEL TREN
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7.3A, 8V
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.17 EUR |
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Technische Details PMV13XNEAR Nexperia USA Inc.
Description: PMV13XNEA - 20 V, N-CHANNEL TREN, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 7.3A, 8V, Power Dissipation (Max): 610mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: TO-236AB, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PMV13XNEAR nach Preis ab 0.14 EUR bis 0.62 EUR
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PMV13XNEAR | Hersteller : Nexperia |
MOSFET PMV13XNEA/SOT23/TO-236AB |
auf Bestellung 13707 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV13XNEAR | Hersteller : Nexperia USA Inc. |
Description: PMV13XNEA - 20 V, N-CHANNEL TREN Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 7.3A, 8V Power Dissipation (Max): 610mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: TO-236AB Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3046 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV13XNEAR | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 30A Mounting: SMD Drain-source voltage: 20V Drain current: 4.6A On-state resistance: 26mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Case: SOT23; TO236AB Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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PMV13XNEAR | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.6A; Idm: 30A Mounting: SMD Drain-source voltage: 20V Drain current: 4.6A On-state resistance: 26mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Case: SOT23; TO236AB |
Produkt ist nicht verfügbar |