auf Bestellung 32876 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 0.65 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.27 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.17 EUR |
| 9000+ | 0.16 EUR |
| 24000+ | 0.15 EUR |
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Technische Details PMV120ENEAR Nexperia
Description: MOSFET N-CH 60V 2.1A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), Rds On (Max) @ Id, Vgs: 123mOhm @ 2.1A, 10V, Power Dissipation (Max): 513mW (Ta), 6.4W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote PMV120ENEAR nach Preis ab 0.2 EUR bis 0.69 EUR
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PMV120ENEAR | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 2.1A TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 123mOhm @ 2.1A, 10V Power Dissipation (Max): 513mW (Ta), 6.4W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2197 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV120ENEAR | Hersteller : NEXPERIA |
Description: NEXPERIA - PMV120ENEAR - Leistungs-MOSFET, n-Kanal, 60 V, 2.1 A, 0.096 ohm, TO-236AB, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 2.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 513mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.096ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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PMV120ENEAR | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.3A; Idm: 8.3A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.3A Pulsed drain current: 8.3A Case: SOT23; TO236AB On-state resistance: 246mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level Anzahl je Verpackung: 1 Stücke |
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PMV120ENEAR | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 2.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 123mOhm @ 2.1A, 10V Power Dissipation (Max): 513mW (Ta), 6.4W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 30 V Qualification: AEC-Q101 |
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PMV120ENEAR | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.3A; Idm: 8.3A; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.3A Pulsed drain current: 8.3A Case: SOT23; TO236AB On-state resistance: 246mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; logic level |
Produkt ist nicht verfügbar |