PMN27XPE115 NXP USA Inc.
Hersteller: NXP USA Inc.Description: SMALL SIGNAL FET
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 530mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
auf Bestellung 34557 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1332+ | 0.37 EUR |
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Technische Details PMN27XPE115 NXP USA Inc.
Description: SMALL SIGNAL FET, Packaging: Bulk, Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V, Power Dissipation (Max): 530mW (Ta), 8.33W (Tc), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V.
Weitere Produktangebote PMN27XPE115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| PMN27XPE115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PMN27XPE115 - INTEGRATED PASSIVE FILTERS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 34557 Stücke: Lieferzeit 14-21 Tag (e) |