PMFPB8032XP,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.7A HUSON6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 485mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Description: MOSFET P-CH 20V 2.7A HUSON6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 485mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
21+ | 0.88 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMFPB8032XP,115 Nexperia USA Inc.
Description: NEXPERIA - PMFPB8032XP,115 - Leistungs-MOSFET, p-Kanal + Schottky, 20 V, 3 A, 0.08 ohm, SOT-1118, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 600mV, euEccn: NLR, Verlustleistung: 485mW, Bauform - Transistor: SOT-1118, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal + Schottky, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.08ohm, SVHC: To Be Advised.
Weitere Produktangebote PMFPB8032XP,115
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
PMFPB8032XP,115 | Hersteller : Nexperia | MOSFET Broad small-signal MOSFET Portfolio |
auf Bestellung 5147 Stücke: Lieferzeit 10-14 Tag (e) |
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PMFPB8032XP,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PMFPB8032XP,115 - Leistungs-MOSFET, p-Kanal + Schottky, 20 V, 3 A, 0.08 ohm, SOT-1118, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 485mW Bauform - Transistor: SOT-1118 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal + Schottky Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.08ohm SVHC: To Be Advised |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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PMFPB8032XP,115 | Hersteller : NEXPERIA | Trans MOSFET P-CH 20V 2.7A 6-Pin HUSON EP T/R |
Produkt ist nicht verfügbar |
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PMFPB8032XP,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 2.7A HUSON6 Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 485mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V |
Produkt ist nicht verfügbar |