PMEG4010EH/DG/B2115 NXP
Hersteller: NXPDescription: NXP - PMEG4010EH/DG/B2115 - MISCELLANEOUS MOSFETS
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details PMEG4010EH/DG/B2115 NXP
Description: RECTIFIER DIODE, SCHOTTKY, Packaging: Bulk, Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 50pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123F, Operating Temperature - Junction: 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A, Current - Reverse Leakage @ Vr: 100 µA @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote PMEG4010EH/DG/B2115
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PMEG4010EH/DG/B2115 | Hersteller : NXP USA Inc. |
Description: RECTIFIER DIODE, SCHOTTKY Packaging: Bulk Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 50pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V Qualification: AEC-Q101 |
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