PMEG2010BEV,115 Nexperia
Hersteller: NexperiaSchottky Diodes & Rectifiers NRND for Automotive Applications PMEG2010BEV/SOT666/SOT6
auf Bestellung 1585 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.71 EUR |
| 10+ | 0.53 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.15 EUR |
| 4000+ | 0.13 EUR |
| 8000+ | 0.1 EUR |
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Technische Details PMEG2010BEV,115 Nexperia
Description: DIODE SCHOTTKY 20V 1A SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 80pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOT-666, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A, Current - Reverse Leakage @ Vr: 200 µA @ 20 V.
Weitere Produktangebote PMEG2010BEV,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| PMEG2010BEV,115 | Hersteller : NXP |
Description: NXP - PMEG2010BEV,115 - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1550 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMEG2010BEV,115 | Hersteller : NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; SOT666; reel,tape Mounting: SMD Case: SOT666 Capacitance: 80pF Max. off-state voltage: 20V Max. forward voltage: 0.5V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 10A Kind of package: reel; tape Type of diode: Schottky rectifying Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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PMEG2010BEV,115 | Hersteller : Nexperia USA Inc. |
Description: DIODE SCHOTTKY 20V 1A SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOT-666 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 20 V |
Produkt ist nicht verfügbar |
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PMEG2010BEV,115 | Hersteller : Nexperia USA Inc. |
Description: DIODE SCHOTTKY 20V 1A SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOT-666 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 20 V |
Produkt ist nicht verfügbar |
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| PMEG2010BEV,115 | Hersteller : NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; SOT666; reel,tape Mounting: SMD Case: SOT666 Capacitance: 80pF Max. off-state voltage: 20V Max. forward voltage: 0.5V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 10A Kind of package: reel; tape Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |