Produkte > NEXPERIA > PMEG120G10ELRZ

PMEG120G10ELRZ NEXPERIA


pmeg120g10elr.pdf Hersteller: NEXPERIA
Diode Switching SiGe 1.4A 2-Pin CFP3
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details PMEG120G10ELRZ NEXPERIA

Description: DIODE SIGE 120V 1A CFP3, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 6 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 36pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: CFP3, Operating Temperature - Junction: 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 120 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A, Current - Reverse Leakage @ Vr: 30 nA @ 120 V.

Weitere Produktangebote PMEG120G10ELRZ

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PMEG120G10ELRZ PMEG120G10ELRZ Hersteller : Nexperia USA Inc. PMEG120G10ELR.pdf Description: DIODE SIGE 120V 1A CFP3
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CFP3
Operating Temperature - Junction: 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Produkt ist nicht verfügbar