PMCM6501UNEZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 8.7A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-WLCSP (1.48x0.98)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V
Description: MOSFET N-CH 20V 8.7A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-WLCSP (1.48x0.98)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4500+ | 0.35 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMCM6501UNEZ Nexperia USA Inc.
Description: MOSFET N-CH 20V 8.7A 6WLCSP, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 4.5V, Power Dissipation (Max): 400mW, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 6-WLCSP (1.48x0.98), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V.
Weitere Produktangebote PMCM6501UNEZ nach Preis ab 0.35 EUR bis 0.93 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMCM6501UNEZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 8.7A 6WLCSP Packaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 4.5V Power Dissipation (Max): 400mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-WLCSP (1.48x0.98) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
PMCM6501UNEZ | Hersteller : NEXPERIA |
Description: NEXPERIA - PMCM6501UNEZ - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 320790 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
PMCM6501UNEZ | Hersteller : Nexperia | MOSFET PMCM6501UNE/NAX000/NONE |
Produkt ist nicht verfügbar |