auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.52 EUR |
| 10+ | 2.92 EUR |
| 100+ | 2.32 EUR |
| 250+ | 2.15 EUR |
| 500+ | 1.95 EUR |
| 1000+ | 1.76 EUR |
| 3000+ | 1.5 EUR |
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Technische Details PJQ5540-AU_R2_002A1 Panjit
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc), Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 50µA, Supplier Device Package: DFN5060X-8L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote PJQ5540-AU_R2_002A1 nach Preis ab 1.59 EUR bis 3.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
|---|---|---|---|---|---|---|---|---|---|
| PJQ5540-AU_R2_002A1 | Hersteller : Panjit International Inc. |
 Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc) Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060X-8L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5540-AU_R2_002A1 | Hersteller : Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc) Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060X-8L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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