PJE8402_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4,5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.15 EUR |
| 12000+ | 0.13 EUR |
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Technische Details PJE8402_R1_00001 Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4,5V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V.
Weitere Produktangebote PJE8402_R1_00001 nach Preis ab 0.12 EUR bis 0.7 EUR
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PJE8402_R1_00001 | Hersteller : Panjit |
MOSFETs 20V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 1732 Stücke: Lieferzeit 10-14 Tag (e) |
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PJE8402_R1_00001 | Hersteller : Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4,5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V |
auf Bestellung 15131 Stücke: Lieferzeit 10-14 Tag (e) |
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PJE8402_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.7A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 2.8A Mounting: SMD Case: SOT523 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJE8402_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.7A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 2.8A Mounting: SMD Case: SOT523 |
Produkt ist nicht verfügbar |