PJE138K_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: SOT-523, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 223mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.098 EUR |
| 8000+ | 0.091 EUR |
| 12000+ | 0.075 EUR |
| 28000+ | 0.074 EUR |
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Technische Details PJE138K_R1_00001 Panjit International Inc.
Description: SOT-523, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Power Dissipation (Max): 223mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-523 Flat Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote PJE138K_R1_00001 nach Preis ab 0.067 EUR bis 0.58 EUR
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PJE138K_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523 Case: SOT523 Mounting: SMD Kind of package: reel; tape Gate charge: 1nC Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhanced Drain-source voltage: 50V Drain current: 0.35A On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 223mW Polarisation: unipolar Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3850 Stücke: Lieferzeit 7-14 Tag (e) |
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PJE138K_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523 Case: SOT523 Mounting: SMD Kind of package: reel; tape Gate charge: 1nC Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhanced Drain-source voltage: 50V Drain current: 0.35A On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 223mW Polarisation: unipolar |
auf Bestellung 3850 Stücke: Lieferzeit 14-21 Tag (e) |
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PJE138K_R1_00001 | Hersteller : Panjit |
MOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 88215 Stücke: Lieferzeit 10-14 Tag (e) |
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PJE138K_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-523, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 223mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-523 Flat Leads Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 35522 Stücke: Lieferzeit 10-14 Tag (e) |
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