auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.39 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.53 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.06 EUR |
| 3000+ | 1 EUR |
| 6000+ | 0.95 EUR |
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Technische Details PJD60P04E-AU_L2_006A1 Panjit
Description: 40V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V.
Weitere Produktangebote PJD60P04E-AU_L2_006A1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| PJD60P04E-AU_L2_006A1 | Hersteller : PanJit Semiconductor |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJD60P04E-AU_L2_006A1 | Hersteller : Panjit International Inc. |
Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V |
Produkt ist nicht verfügbar |
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PJD60P04E-AU_L2_006A1 | Hersteller : Panjit International Inc. |
Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V |
Produkt ist nicht verfügbar |
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| PJD60P04E-AU_L2_006A1 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |