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PJD30N04S-AU_L2_002A1

PJD30N04S-AU_L2_002A1 Panjit

PJD30N04S_AU-3395049.pdf Hersteller: Panjit
MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Lieferzeit 10-14 Tag (e)
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2+2.46 EUR
10+ 2.22 EUR
100+ 1.97 EUR
500+ 1.83 EUR
1000+ 1.62 EUR
3000+ 1.02 EUR
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Technische Details PJD30N04S-AU_L2_002A1 Panjit

Description: 40V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 43A (Tc), Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 50µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote PJD30N04S-AU_L2_002A1 nach Preis ab 0.96 EUR bis 3.41 EUR

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PJD30N04S-AU_L2_002A1 Hersteller : Panjit International Inc. PJD30N04S-AU Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.96 EUR
Mindestbestellmenge: 3000
PJD30N04S-AU_L2_002A1 Hersteller : Panjit International Inc. PJD30N04S-AU Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.41 EUR
Mindestbestellmenge: 6