PHP45NQ10T,127 NXP Semiconductors
Hersteller: NXP SemiconductorsDescription: NEXPERIA PHP45NQ10T - 47A, 100V,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 4909 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 281+ | 1.74 EUR |
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Technische Details PHP45NQ10T,127 NXP Semiconductors
Description: NEXPERIA PHP45NQ10T - 47A, 100V,, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V.
Weitere Produktangebote PHP45NQ10T,127 nach Preis ab 1.75 EUR bis 4.03 EUR
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PHP45NQ10T,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 47A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
auf Bestellung 4566 Stücke: Lieferzeit 10-14 Tag (e) |
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PHP45NQ10T,127 | Hersteller : Nexperia |
MOSFET PHP45NQ10T/SOT78/SIL3P |
auf Bestellung 3571 Stücke: Lieferzeit 10-14 Tag (e) |
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PHP45NQ10T,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 33A; Idm: 188A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 33A Pulsed drain current: 188A Power dissipation: 150W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PHP45NQ10T,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 33A; Idm: 188A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 33A Pulsed drain current: 188A Power dissipation: 150W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |