Technische Details PHK28NQ03LT,518
Description: MOSFET N-CH 30V 23.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23.7A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V, Power Dissipation (Max): 6.25W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V.
Weitere Produktangebote PHK28NQ03LT,518
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PHK28NQ03LT,518 | Hersteller : NEXPERIA |
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Produkt ist nicht verfügbar |
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PHK28NQ03LT,518 | Hersteller : NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.7A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Power Dissipation (Max): 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V |
Produkt ist nicht verfügbar |
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PHK28NQ03LT,518 | Hersteller : Nexperia |
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Produkt ist nicht verfügbar |