Produkte > PHILIPS > PDTC123JK,115

PDTC123JK,115 Philips


PDTC123J Series.pdf Hersteller: Philips
PDTC123JK,115
auf Bestellung 216000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
16130+0.04 EUR
Mindestbestellmenge: 16130
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PDTC123JK,115 Philips

Description: TRANS PREBIAS NPN 50V 0.1A SMT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Supplier Device Package: SMT3; MPAK, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote PDTC123JK,115

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PDTC123JK,115 PDTC123JK,115 Hersteller : NXP USA Inc. PDTC123J Series.pdf Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH