auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2959+ | 0.052 EUR |
| 3145+ | 0.047 EUR |
| 6000+ | 0.043 EUR |
| 15000+ | 0.038 EUR |
| 30000+ | 0.034 EUR |
Produktrezensionen
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Technische Details PDTC114YQCZ Nexperia
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V, Supplier Device Package: DFN1412D-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 360 mW, Frequency - Transition: 230 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote PDTC114YQCZ nach Preis ab 0.052 EUR bis 0.44 EUR
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PDTC114YQCZ | Hersteller : Nexperia |
 Trans Digital BJT NPN 50V 100mA 450mW 3-Pin DFN-D T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTC114YQCZ | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTC114YQCZ | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTC114YQCZ | Hersteller : Nexperia |
Digital Transistors PDTC114YQC/SOT8009/DFN1412D-3 |
Produkt ist nicht verfügbar |