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PDTB123TT,215 NEXPERIA
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Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Anzahl je Verpackung: 20 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1160+ | 0.062 EUR |
1280+ | 0.056 EUR |
1660+ | 0.043 EUR |
1760+ | 0.041 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PDTB123TT,215 NEXPERIA
Description: TRANS PREBIAS PNP 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V, Supplier Device Package: TO-236AB, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 2.2 kOhms.
Weitere Produktangebote PDTB123TT,215 nach Preis ab 0.041 EUR bis 0.51 EUR
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PDTB123TT,215 | Hersteller : NEXPERIA |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTB123TT,215 | Hersteller : Nexperia |
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auf Bestellung 8010 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTB123TT,215 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTB123TT,215 | Hersteller : NEXPERIA |
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auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTB123TT,215 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms |
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