![PDTA113ZK,115 PDTA113ZK,115](https://download.siliconexpert.com/pdfs/2017/2/15/5/44/41/872/nexpe_/manual/sot346_3d.jpg)
PDTA113ZK,115 NXP Semiconductors
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details PDTA113ZK,115 NXP Semiconductors
Description: TRANS PREBIAS PNP 50V 0.1A SMT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V, Supplier Device Package: SMT3; MPAK, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote PDTA113ZK,115
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
PDTA113ZK,115 | Hersteller : NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V Supplier Device Package: SMT3; MPAK Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |