PCFFS4065AF onsemi
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 40A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1989pF @ 1V, 100kHz
Current - Average Rectified (Io): 40A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 40A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1989pF @ 1V, 100kHz
Current - Average Rectified (Io): 40A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 1364 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1364+ | 10.03 EUR |
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Technische Details PCFFS4065AF onsemi
Description: DIODE SIL CARBIDE 650V 40A DIE, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1989pF @ 1V, 100kHz, Current - Average Rectified (Io): 40A, Supplier Device Package: Die, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A, Current - Reverse Leakage @ Vr: 200 µA @ 650 V.
Weitere Produktangebote PCFFS4065AF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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PCFFS4065AF | Hersteller : onsemi |
 Schottky Diodes & Rectifiers TBD_25CH |
Produkt ist nicht verfügbar |