auf Bestellung 1 Stücke:
Lieferzeit 325-329 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 33.62 EUR |
| 10+ | 30.91 EUR |
| 25+ | 29.62 EUR |
| 50+ | 28.65 EUR |
| 100+ | 26.1 EUR |
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Technische Details PCFFS40120AF onsemi
Description: DIODE SIL CARB 1.2KV WAFER DIE, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2250pf @ 1V, 100kHz, Current - Average Rectified (Io): 61A, Supplier Device Package: Die, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote PCFFS40120AF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| PCFFS40120AF | Hersteller : onsemi |
 Description: DIODE SIL CARB 1.2KV WAFER DIEPackaging: Tray Package / Case: Die Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2250pf @ 1V, 100kHz Current - Average Rectified (Io): 61A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
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