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PCDD1065G1_L2_00001

PCDD1065G1_L2_00001 Panjit International Inc.


PCDD1065G1.pdf Hersteller: Panjit International Inc.
Description: 650V SIC SCHOTTKY BARRIER DIODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 364pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+3.22 EUR
Mindestbestellmenge: 3000
Produktrezensionen
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Technische Details PCDD1065G1_L2_00001 Panjit International Inc.

Description: 650V SIC SCHOTTKY BARRIER DIODE, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 364pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-252AA, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 70 µA @ 650 V.

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PCDD1065G1_L2_00001 PCDD1065G1_L2_00001 Hersteller : Panjit PCDD1065G1-2853794.pdf Schottky Diodes & Rectifiers 650V SiC Schottky Barrier Diode
auf Bestellung 2983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.85 EUR
10+ 5.76 EUR
100+ 4.66 EUR
250+ 4.4 EUR
500+ 4.14 EUR
1000+ 3.73 EUR
3000+ 3.33 EUR
PCDD1065G1_L2_00001 PCDD1065G1_L2_00001 Hersteller : Panjit International Inc. PCDD1065G1.pdf Description: 650V SIC SCHOTTKY BARRIER DIODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 364pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.88 EUR
10+ 5.79 EUR
100+ 4.68 EUR
500+ 4.16 EUR
1000+ 3.57 EUR
Mindestbestellmenge: 3
PCDD1065G1_L2_00001 PCDD1065G1_L2_00001 Hersteller : PanJit Semiconductor PCDD1065G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 44A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 70µA
Max. forward impulse current: 0.55kA
Power dissipation: 99.3W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PCDD1065G1-L2-00001 PCDD1065G1-L2-00001 Hersteller : Panjit PCDD1065G1-2853794.pdf Schottky Diodes & Rectifiers TO-252AA/SIC/TO/SIC-100SWH
Produkt ist nicht verfügbar
PCDD1065G1_L2_00001 PCDD1065G1_L2_00001 Hersteller : PanJit Semiconductor PCDD1065G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 44A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 70µA
Max. forward impulse current: 0.55kA
Power dissipation: 99.3W
Produkt ist nicht verfügbar