PCDB10120G1_R2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 1200V SIC SCHOTTKY BARRIER DIODE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 529pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 6.51 EUR |
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Technische Details PCDB10120G1_R2_00001 Panjit International Inc.
Description: 1200V SIC SCHOTTKY BARRIER DIODE, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 529pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote PCDB10120G1_R2_00001 nach Preis ab 6.51 EUR bis 8.8 EUR
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PCDB10120G1_R2_00001 | Hersteller : Panjit |
Schottky Diodes & Rectifiers 1200V SiC Schottky Barrier Diode |
auf Bestellung 2270 Stücke: Lieferzeit 10-14 Tag (e) |
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PCDB10120G1_R2_00001 | Hersteller : Panjit International Inc. |
Description: 1200V SIC SCHOTTKY BARRIER DIODE Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 529pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 2350 Stücke: Lieferzeit 10-14 Tag (e) |
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| PCDB10120G1_R2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Max. load current: 76A Semiconductor structure: single diode Max. forward voltage: 2V Case: TO263 Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 640A Power dissipation: 164.8W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PCDB10120G1-R2-00001 | Hersteller : Panjit |
Schottky Diodes & Rectifiers TO-263/SIC/TO/SIC-100DWH |
Produkt ist nicht verfügbar |
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| PCDB10120G1_R2_00001 | Hersteller : PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Max. load current: 76A Semiconductor structure: single diode Max. forward voltage: 2V Case: TO263 Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 640A Power dissipation: 164.8W |
Produkt ist nicht verfügbar |