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PCDB0865G1_R2_00001

PCDB0865G1_R2_00001 Panjit


PCDB0865G1-2891581.pdf Hersteller: Panjit
SiC Schottky Diodes 650V SiC Schottky Barrier Diode
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Technische Details PCDB0865G1_R2_00001 Panjit

Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 8A, Max. load current: 36A, Semiconductor structure: single diode, Max. forward voltage: 1.8V, Case: TO263, Kind of package: reel; tape, Leakage current: 60µA, Max. forward impulse current: 0.48kA, Power dissipation: 78.5W, Anzahl je Verpackung: 1 Stücke.

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PCDB0865G1_R2_00001 Hersteller : PanJit Semiconductor Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 36A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 60µA
Max. forward impulse current: 0.48kA
Power dissipation: 78.5W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PCDB0865G1_R2_00001 Hersteller : PanJit Semiconductor Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 36A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 60µA
Max. forward impulse current: 0.48kA
Power dissipation: 78.5W
Produkt ist nicht verfügbar