PBSS4160QA147 NXP
Hersteller: NXPDescription: NXP - PBSS4160QA147 - SCHOTTKY RECTIFIER DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 290000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details PBSS4160QA147 NXP
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 100mA, 2V, Frequency - Transition: 180MHz, Supplier Device Package: DFN1010D-3, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PBSS4160QA147
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PBSS4160QA147 | Hersteller : NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 100mA, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN1010D-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W Grade: Automotive Qualification: AEC-Q101 |
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