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PBRN113ET-QR

PBRN113ET-QR NEXPERIA


PBRN113ET-Q.pdf Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 40V; 0.7A; 370mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 40V
Collector current: 0.7A
Power dissipation: 0.37W
Case: SOT23; TO236AB
Current gain: 40...420
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Application: automotive industry
Base-emitter resistor: 1kΩ
Anzahl je Verpackung: 5 Stücke
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Technische Details PBRN113ET-QR NEXPERIA

Description: TRANS PREBIAS NPN 40V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 800mA, 5V, Supplier Device Package: TO-236AB, Grade: Automotive, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 250 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, Qualification: AEC-Q101.

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PBRN113ET-QR PBRN113ET-QR Hersteller : Nexperia USA Inc. PBRN113ET-Q.pdf Description: TRANS PREBIAS NPN 40V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 800mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PBRN113ET-QR PBRN113ET-QR Hersteller : Nexperia PBRN113ET-Q.pdf Digital Transistors PBRN113ET-Q/SOT23/TO-236AB
Produkt ist nicht verfügbar
PBRN113ET-QR PBRN113ET-QR Hersteller : NEXPERIA PBRN113ET-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 40V; 0.7A; 370mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 40V
Collector current: 0.7A
Power dissipation: 0.37W
Case: SOT23; TO236AB
Current gain: 40...420
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Application: automotive industry
Base-emitter resistor: 1kΩ
Produkt ist nicht verfügbar