PBRN113ET-QR NEXPERIA
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 40V; 0.7A; 370mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 40V
Collector current: 0.7A
Power dissipation: 0.37W
Case: SOT23; TO236AB
Current gain: 40...420
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Application: automotive industry
Base-emitter resistor: 1kΩ
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 40V; 0.7A; 370mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 40V
Collector current: 0.7A
Power dissipation: 0.37W
Case: SOT23; TO236AB
Current gain: 40...420
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Application: automotive industry
Base-emitter resistor: 1kΩ
Anzahl je Verpackung: 5 Stücke
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Technische Details PBRN113ET-QR NEXPERIA
Description: TRANS PREBIAS NPN 40V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 800mA, 5V, Supplier Device Package: TO-236AB, Grade: Automotive, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 250 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, Qualification: AEC-Q101.
Weitere Produktangebote PBRN113ET-QR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PBRN113ET-QR | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 40V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 800mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PBRN113ET-QR | Hersteller : Nexperia | Digital Transistors PBRN113ET-Q/SOT23/TO-236AB |
Produkt ist nicht verfügbar |
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PBRN113ET-QR | Hersteller : NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 40V; 0.7A; 370mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 40V Collector current: 0.7A Power dissipation: 0.37W Case: SOT23; TO236AB Current gain: 40...420 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Application: automotive industry Base-emitter resistor: 1kΩ |
Produkt ist nicht verfügbar |