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P6SMB36CAHR5G TAIWAN SEMICONDUCTOR
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Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
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Technische Details P6SMB36CAHR5G TAIWAN SEMICONDUCTOR
Description: TVS DIODE 30.8VWM 49.9VC DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 150°C (TJ), Current - Peak Pulse (10/1000µs): 12.6A, Voltage - Reverse Standoff (Typ): 30.8V, Supplier Device Package: DO-214AA (SMB), Bidirectional Channels: 1, Voltage - Breakdown (Min): 34.2V, Voltage - Clamping (Max) @ Ipp: 49.9V, Power - Peak Pulse: 600W, Power Line Protection: No, Part Status: Discontinued at Digi-Key, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote P6SMB36CAHR5G
Foto | Bezeichnung | Hersteller | Beschreibung |
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P6SMB36CAHR5G | Hersteller : Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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P6SMB36CAHR5G | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 12.6A Voltage - Reverse Standoff (Typ): 30.8V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 34.2V Voltage - Clamping (Max) @ Ipp: 49.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Discontinued at Digi-Key Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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P6SMB36CAHR5G | Hersteller : Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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P6SMB36CAHR5G | Hersteller : TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 36V; 12.6A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |