P6SMB250A-M3/5B Vishay General Semiconductor
Hersteller: Vishay General SemiconductorESD Protection Diodes / TVS Diodes 600W,250V 5%,UNIDIR,SMB TVS
auf Bestellung 6010 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.99 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.49 EUR |
| 2500+ | 0.44 EUR |
| 5000+ | 0.41 EUR |
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Technische Details P6SMB250A-M3/5B Vishay General Semiconductor
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 600W; 250V; 1.74A; unidirectional; ±5%; SMB; reel,tape, Manufacturer series: P6SMB, Mounting: SMD, Max. forward impulse current: 1.74A, Breakdown voltage: 250V, Leakage current: 1µA, Kind of package: reel; tape, Type of diode: TVS, Tolerance: ±5%, Case: SMB, Features of semiconductor devices: glass passivated, Technology: TransZorb®, Max. off-state voltage: 214V, Peak pulse power dissipation: 0.6kW, Semiconductor structure: unidirectional, Anzahl je Verpackung: 3200 Stücke.
Weitere Produktangebote P6SMB250A-M3/5B
| Foto | Bezeichnung | Hersteller | Beschreibung |
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P6SMB250A-M3/5B | Hersteller : VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 250V; 1.74A; unidirectional; ±5%; SMB; reel,tape Manufacturer series: P6SMB Mounting: SMD Max. forward impulse current: 1.74A Breakdown voltage: 250V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Tolerance: ±5% Case: SMB Features of semiconductor devices: glass passivated Technology: TransZorb® Max. off-state voltage: 214V Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Anzahl je Verpackung: 3200 Stücke |
Produkt ist nicht verfügbar |
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P6SMB250A-M3/5B | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 214V 344V DO214AA |
Produkt ist nicht verfügbar |
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P6SMB250A-M3/5B | Hersteller : VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 250V; 1.74A; unidirectional; ±5%; SMB; reel,tape Manufacturer series: P6SMB Mounting: SMD Max. forward impulse current: 1.74A Breakdown voltage: 250V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Tolerance: ±5% Case: SMB Features of semiconductor devices: glass passivated Technology: TransZorb® Max. off-state voltage: 214V Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional |
Produkt ist nicht verfügbar |