Produkte > TAIWAN SEMICONDUCTOR > P6SMB200CAHM4G

P6SMB200CAHM4G Taiwan Semiconductor


p6smbh20series_a2102.pdf Hersteller: Taiwan Semiconductor
TVS Diode Single Bi-Dir 171V 600W Automotive 2-Pin SMB T/R
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details P6SMB200CAHM4G Taiwan Semiconductor

Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape, Mounting: SMD, Case: SMB, Kind of package: reel; tape, Max. forward impulse current: 2.2A, Breakdown voltage: 200V, Leakage current: 1µA, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Tolerance: ±5%, Max. off-state voltage: 171V, Semiconductor structure: bidirectional, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote P6SMB200CAHM4G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
P6SMB200CAHM4G P6SMB200CAHM4G Hersteller : TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 2.2A
Breakdown voltage: 200V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. off-state voltage: 171V
Semiconductor structure: bidirectional
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
P6SMB200CAHM4G P6SMB200CAHM4G Hersteller : Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 171VWM 274VC DO214AA
Produkt ist nicht verfügbar
P6SMB200CAHM4G P6SMB200CAHM4G Hersteller : Taiwan Semiconductor P6SMB_SERIES_O2004-1918287.pdf ESD Suppressors / TVS Diodes 600W 200V 5% Bidirec tional TVS
Produkt ist nicht verfügbar
P6SMB200CAHM4G P6SMB200CAHM4G Hersteller : TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 2.2A
Breakdown voltage: 200V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Max. off-state voltage: 171V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar